2009/04/30 ver.1 page 1 spn8878 n-channel enhancement mode mosfet description applications the spn8878 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. the spn8878 has b een designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. z power management in note book z powered system z dc/dc converter z load switch features pin configuration to-252 part marking ? 30v/20a,r ds(on) = 12m ? @v gs =10v ? 30v/15a,r ds(on) = 17m ? @v gs =4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252 package design
2009/04/30 ver.1 page 2 spn8878 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking spn8878t252rgb to-252 spn8878 spn8878t252rgb : tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 20 v t a =25 18 continuous drain current t a =100 i d 13 a pulsed drain current i dm 40 a continuous drain current i s 5 a to-252-2l 40 power dissipation t a =25 to-251 p d 55 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 100 /w electrical characteristics
2009/04/30 ver.1 page 3 spn8878 n-channel enhancement mode mosfet (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =24v,v gs =0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0v t j =85 5 ua on-state drain current i d(on) v ds 5v,v gs =10v 40 a v gs = 10v,i d =20a 0.010 0.012 drain-source on-resistance r ds(on) v gs =4.5v,i d =15a 0.013 0.017 ? forward transconductance gfs v ds =15v,i d =20a 15 s diode forward voltage v sd i s =40a,v gs =0v 0.8 1.5 v dynamic total gate charge q g 28 42 gate-source charge q gs 6 gate-drain charge q gd v ds =15v,v gs =10v i d = 50a 5 nc input capacitance c iss 1600 output capacitance c oss 285 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 140 pf t d(on) 9 15 turn-on time t r 15 25 t d(off) 20 30 turn-off time t f v dd =15v,r l =0.3 ? i d 50a,v gen =10v r g =1 ? 12 20 ns typical characteristics
2009/04/30 ver.1 page 4 spn8878 n-channel enhancement mode mosfet typical characteristics
2009/04/30 ver.1 page 5 spn8878 n-channel enhancement mode mosfet typical characteristics
2009/04/30 ver.1 page 6 spn8878 n-channel enhancement mode mosfet to-252 package outline
2009/04/30 ver.1 page 7 spn8878 n-channel enhancement mode mosfet
2009/04/30 ver.1 page 8 spn8878 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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